| Titre : | Caractérisation des diodes Schottky en AlGaAs dopé p et n par silicium sur un substrat GaAs d'orientation conventionnelle |
| Auteurs : | walid Filali, Auteur ; Noureddine Sengouga, Auteur |
| Type de document : | Monographie imprimée |
| Editeur : | Biskra [Algerie] : Université Mohamed Khider, 2017 |
| Langues: | Français |
| Mots-clés: | AlGaAs,Capacité-tension,Courant-tension,Facteur d’idéalité,Hauteur de la barrière,Schottky diodes,Semi-conducteurs |
| Résumé : |
RESUME :
Dans ce travail, nous nous intéressons principalement à la caractérisation électrique, tel que la mesure des caractéristiques courant-tension et capacité-tension. Ces caractéristiques sont très sensibles à la température ainsi qu’à d’autres paramètres comme, la fréquence du signal électrique et la surface de l’échantillon. De ce fait, nous avons procédé à des mesures expérimentales et des simulations technologiques afin d’illustrer ces effets et déduire des interprétations liés de ces derniers. ABSTRACT : In this work, we are primarily concerned with electrical characterization, including the measurement of the characteristics of current-voltage and capacitance-voltage. These characteristics are very sensitive to temperature and other parameters like signal frequency and sample area. Thereby we carried out experimental measurements and technological simulations in order to illustrate these effects and deduce interpretations related to these effects. |
| Sommaire : |
Dedication .......................................................................................................................I
Acknowledgments ................................................................................................... ….II ……………….................................................................................................... IIIملخص Résumé………………………………………………………………………………..IV Abstract……………………………………………………………………………….V contents…………… ....................................................................................................VI List of figures...............................................................................................................XI List of tables.............................................................................................................XVII Chapter 1: Introduction 1.1 Introduction...............................................................................................................1 1.2 Background ...............................................................................................................1 1.3 Aim of thesis .............................................................................................................2 1.4 Scheme of the thesis..................................................................................................2 Chapter 2:Theoritical aspects of semiconductors 2.1 Introduction...............................................................................................................3 2.2 Semiconductor Materials .....................................................................................….3 2.2.1 Intrinsic semiconductor...............................................................................3 2.2.2 Extrinsic semiconductor..............................................................................3 2.2.3 Carrier concentration ..................................................................................4 2.2.4 Fermi Level.................................................................................................4 2.3 Electrical proprieties of semiconductors...................................................................4 2.3.1 Poisson’s equation ......................................................................................4 2.3.2 Continuity equations ...................................................................................5 2.3.3 Carrier mobility...........................................................................................5 2.4 Semiconductors III-V based on Gallium ..................................................................5 VII 2.4.1 Band gap energy .........................................................................................6 2.4.2 Generation-recombination ..........................................................................8 2.4.3 Effect of temperature on energy band gap................................................10 2.4.4 Heterojunction structures ..........................................................................10 2.5 Multi-quantum wells structure................................................................................14 2.5.1 Schrodinger’s equation solutions..............................................................15 2.5.2 Work function ...........................................................................................16 2.5.3 Electronic affinity .....................................................................................16 2.6 Metal-semiconductor contact..................................................................................17 2.6.1 Schottky barrier contact ............................................................................17 2.6.2 Bang gap energy .......................................................................................19 2.6.3 Capacitance of depletion region................................................................20 2.6.4 Transient capacitance................................................................................21 2.7 General properties of AlxGa1-xAs...........................................................................23 2.8 Traps ......................................................................................................................26 2.8.1 Classification of defects............................................................................26 2.8.1.1 Point defects......................................................................................26 2.8.1.2 Vacancy.............................................................................................27 2.8.1.3 Interstitial ..........................................................................................27 2.8.1.4 Subtitutional impurity .......................................................................28 2.8.1.5 Antisite defects..................................................................................28 2.8.1.6 Complex defects................................................................................29 2.8.1.7 Frenkel defects ..................................................................................29 2.8.1.8 Split interstitial..................................................................................29 2.8.1.9 Vacancy complexes ..........................................................................30 2.8.1.10 Shallow and deep level defects .........................................................31 2.9 Generation recombination statistics.......................................................................33 2.9.1 Ionized trap density...................................................................................34 VIII 2.9.2 Carrier emission rates ...............................................................................35 Chapter 3: Process and Characterization Techniques 3.1 Introduction.............................................................................................................37 3.2 Fabrication process of Schottky diodes based on GaAs substrate..........................37 3.2.1 Molecular beam epitaxy technique ...........................................................37 3.2.2 Cleavage and cleaning ..............................................................................40 a) Manually, by using a tracing diamond tool as shown in figure 3.4. ............40 b) Mechanically using the tip to draw automatically. ........................................40 3.2.3 Photolithography.......................................................................................41 3.2.4 Wet etch ....................................................................................................42 3.2.5 Characterization by profilometer ..............................................................43 3.2.6 Deposition of the contacts.........................................................................44 3.2.7 Wire bonding ............................................................................................45 3.3 Samples used in this study ......................................................................................47 3.3.1 NU1054 Multi-Quantum Wells (MQWs) GaAs/Al 0.33 Ga 0.67 As............47 3.3.2 NU1362 p-type Al 0.29 Ga 0.71 As sample ..................................................49 3.4 Device characterization tools..................................................................................51 3.4.1 Deep Level Transient Spectroscopy .........................................................51 3.4.2 DLTS characterization bench ...................................................................51 a) Transient current and capacity analysis with the DLTS Laplace technique,53 b) I-V and C-V characterization as a function of temperature in the range 10 to 450 K,....................................................................................................................53 c) Current and capacitance as a function of temperature (I-T, C-T). .............53 3.5 Electrical characterization bench ............................................................................53 3.5.1 Current-voltage (I-V) technique ...............................................................54 3.5.2 Capacitance-voltage (C-V) technique.......................................................56 3.6 Extraction methods of Schottky diode parameters .................................................56 3.6.1 Current-Voltage Forward bias ..................................................................56 IX 3.6.1.1 Standard method ...............................................................................56 3.6.1.2 Cheung method .................................................................................59 3.6.2 Current-Voltage Reverse bias ...................................................................60 3.6.3 Capacitance-Voltage (C-V) ......................................................................61 3.6.3.1 The barrier height..............................................................................63 3.6.3.2 The doping density............................................................................63 3.7 Conclusion ..............................................................................................................65 Chapter 4: Results and discussion 4.1 Introduction.............................................................................................................66 4.2 Characterized devices .............................................................................................66 4.2.1 NU1054 MQW Al 0.33 Ga 0.67 As n-type....................................................66 4.2.1.1 I-V characteristics .............................................................................66 4.2.1.2 C-V characteristics............................................................................68 4.2.1.3 I-V-T characteristics .........................................................................72 4.2.1.4 C-V-T characteristics ........................................................................73 4.2.2 NU1362 AlGaAs p-type ...........................................................................74 4.2.2.1 I-V characteristics .............................................................................74 4.2.2.2 C-V characteristics............................................................................76 4.2.2.3 I-V-T characteristics .........................................................................78 4.2.2.4 C-V-T characteristics ........................................................................80 4.3 Extraction parameters for NU1054 n-AlGaAs MQW Schottky diode ...................81 4.3.1 Effect of traps............................................................................................89 4.3.2 Tunneling current......................................................................................92 4.4 Conclusion ..............................................................................................................95 X Chapter 5: Conclusion 5.1 Conclusion………………………………………………………………………. .96 5.2 Perspectives.............................................................................................................97 References....................................................................................................................98 Publication .................................................................................................................102 |
Disponibilité (1)
| Cote | Support | Localisation | Statut | Emplacement | |
|---|---|---|---|---|---|
| TH/0824 | Thèse de doctorat | BIB.FAC.ST. | Empruntable | Salle de mémoires et de théses |
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